METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A fabrication method of semiconductor devices is provided to prevent increase of a contact resistance between a gate line and a bit line and characteristic attenuation by additionally forming a silicon nitride on the gate line. CONSTITUTION: After forming a doped polysilicon layer(22) on a semiconductor substrate(21), a tungsten silicide layer(23) is formed on the resultant structure by reacting SiH2Cl2 with WF6 at the temperature of 550-600 deg.C. Sequentially, a silicon nitride(24) is deposited on the tungsten silicide layer(23) using an in-situ PE-CVD(Plasma Enhanced-Chemical Vapor Deposition) at the room temperature, after ionizing a mixed gas with SiH4 and N2 flowed from the tungsten silicide layer(23) deposition using an RF(Radio Frequency) discharge, thereby preparing a gate line(30). At this time, the silicon nitride(24) reduces a contact resistance between the gate line(30) and a following bit line(50).