| 摘要 |
PURPOSE: A method for fabricating a cold cathode device is provided to form a tip type device less than sub micron by using a liquid phase deposition method. CONSTITUTION: A photoresist hole pattern is formed by a photo-lithography method. A hole is formed in an inside of an insulating layer(36a) by using a photoresist(44) as a mask. An SiO2 layer(38a) is formed by using a liquid phase deposition method. A gate metal layer(40) such as Cr, Mo, W, and Nb is deposited on the SiO2 layer(38a) by an electron beam deposition method. The same metal layer as the gate metal layer is formed on a cathode of the inside of the gate hole. A parting layer(46) is formed on a surface of the gate metal layer(40). Molybdenum is deposited thereon by using electron beam deposition method and a molybdenum emitter tip(44) is formed on the metal layer. The parting layer(46) is removed by using an etch solution.
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