| 摘要 |
PURPOSE: To provide a semiconductor device and its manufacturing method provided with Cu-based wiring without producing a phenomenon wherein the insulation film of wiring circumference peels. CONSTITUTION: The semiconductor device is provided with an insulation layer (2) formed on a semiconductor substrate (1), a wiring pattern groove (3) formed on the insulation layer (2), a conductive spreading prevention layer (4) formed on the inner face of the wiring pattern groove (3), and the Cu-based wiring (6) formed in the wiring pattern groove forming a conductive spreading prevention layer (4). The content of sulfur of the Cu-based wiring (6) is 100 atom ppm or more and 1 atom.% or less. |
