发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PURPOSE: To provide a semiconductor device which has a contact hole opened by self alignment and which can suppress a contact resistance while preventing short-circuiting between a wiring and a contact plug. CONSTITUTION: A contact plug 26 is formed by self alignment between adjacent wirings 14. An interlayer oxide film 12 is formed on a substrate layer 10 conducted with a bottom surface of the contact plug. A lower insulating film 32 made of a nitride-based insulating film is provided to cover the entire surface of the interlayer oxide film 12, except for a part corresponding to the contact hole. A wiring 12, an upper insulating film 16 made of a nitride-based insulating film, and a sidewall 18 made of a nitride-based insulating film are provided on the lower insulating film 32. The contact hole has a diameter larger than an interval between the wirings 14 in the same layer as the interlayer oxide film 12. |
申请公布号 |
KR20020054264(A) |
申请公布日期 |
2002.07.06 |
申请号 |
KR20010055269 |
申请日期 |
2001.09.08 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
TANAKA YOSHINORI;TERAUCHI TAKASHI |
分类号 |
H01L21/28;H01L21/60;H01L21/768;H01L21/8242;H01L23/485;H01L23/522;H01L27/108;(IPC1-7):H01L21/28 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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