发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: To provide a semiconductor device which has a contact hole opened by self alignment and which can suppress a contact resistance while preventing short-circuiting between a wiring and a contact plug. CONSTITUTION: A contact plug 26 is formed by self alignment between adjacent wirings 14. An interlayer oxide film 12 is formed on a substrate layer 10 conducted with a bottom surface of the contact plug. A lower insulating film 32 made of a nitride-based insulating film is provided to cover the entire surface of the interlayer oxide film 12, except for a part corresponding to the contact hole. A wiring 12, an upper insulating film 16 made of a nitride-based insulating film, and a sidewall 18 made of a nitride-based insulating film are provided on the lower insulating film 32. The contact hole has a diameter larger than an interval between the wirings 14 in the same layer as the interlayer oxide film 12.
申请公布号 KR20020054264(A) 申请公布日期 2002.07.06
申请号 KR20010055269 申请日期 2001.09.08
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 TANAKA YOSHINORI;TERAUCHI TAKASHI
分类号 H01L21/28;H01L21/60;H01L21/768;H01L21/8242;H01L23/485;H01L23/522;H01L27/108;(IPC1-7):H01L21/28 主分类号 H01L21/28
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