| 摘要 |
PROBLEM TO BE SOLVED: To suppress carrier overflow and re-coupling probability drop for reduced threshold current when an SCH(separate confinement hetero structure) structure is employed. SOLUTION: Relating to a nitride group semiconductor laser comprising an SCH structure wherein an InGaN group active layer 110 of multiplex quantum well structure wherein an InGaN well layer 111 and an InGaN barrier layer 112 are alternately laminated on a sapphire substrate 101 is sandwiched between a pair of GaN optical guide layers 105 and 121, which is further sandwiched between a pair of AlGaN clad layers 104 and 122 of p-type and n-type, one of those closest to the p-type AlGaN clad layer 122, among the InGaN well layer 111 of multiplex quantum well structure constituting the active of layer 110, is made to be n-type layer by silicon heavy doping. |
