| 摘要 |
A first cathode flange (14) provided with branch-like protrusions (14d) extending towards substantially its outer periphery and a gate flange (15) provided with branch-like protrusions (15c) extending towards substantially its outer periphery are connected to a cathode electrode (7a) and a gate electrode (7b), respectively, formed on one surface of a gate drive substrate (7). With this structure, a gate commutated turn-off semiconductor device which eliminates the necessity of a gate spacer and a cathode spacer and allows reduction in time and cost required for manufacture can be achieved.
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