发明名称 SOI component
摘要 A semiconductor component has a semiconductor substrate, an insulation layer located on the semiconductor substrate, and a semiconductor layer that is arranged on the insulation layer. A first doped terminal zone, a second doped terminal zone, and a drift zone are formed in the semiconductor layer between the first and second terminal zones. At least one of the first and second terminal zones directly adjoins the semiconductor substrate.
申请公布号 US2002113275(A1) 申请公布日期 2002.08.22
申请号 US20020073847 申请日期 2002.02.11
申请人 STECHER MATTHIAS;WERNER WOLFGANG 发明人 STECHER MATTHIAS;WERNER WOLFGANG
分类号 H01L27/12;H01L29/06;H01L29/73;H01L29/78;H01L29/786;H01L29/861;(IPC1-7):H01L31/062 主分类号 H01L27/12
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