发明名称 |
Chemical mechanical polishing slurry |
摘要 |
A polishing slurry including an abrasive, deionized water, a pH controlling agent, and polyethylene imine, can control the removal rates of a silicon oxide layer and a silicon nitride layer which are simultaneously exposed during chemical mechanical polishing (CMP) of a conductive layer. A relative ratio of the removal rate of the silicon oxide layer to that of the silicon nitride layer can be controlled by controlling an amount of the choline derivative. |
申请公布号 |
US2002123224(A1) |
申请公布日期 |
2002.09.05 |
申请号 |
US20010023948 |
申请日期 |
2001.12.21 |
申请人 |
LEE JAE-DONG;YOON BO-UN;HAH SANG-ROK |
发明人 |
LEE JAE-DONG;YOON BO-UN;HAH SANG-ROK |
分类号 |
B24B37/00;C09C1/68;C09G1/02;C09K3/14;H01L21/304;H01L21/321;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
B24B37/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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