发明名称 |
Method of determining a crystallographic quality of a material located on a substrate |
摘要 |
The present invention provides a method of determining a crystallographic quality of a material located on a substrate. The method includes determining a set of crystallographic solutions for an unknown crystallographic orientation, and subsequently comparing the set of crystallographic solutions to adjacent known crystallographic orientations to determine the unknown crystallographic orientation. In a preferred embodiment, the set of crystallographic solutions may be a rank of crystallographic solutions which may represent the most probable crystallographic orientations. The rank of crystallographic solutions, in an alternative embodiment, may be represented by a vote, a fit and a confidence index.
|
申请公布号 |
US2002128789(A1) |
申请公布日期 |
2002.09.12 |
申请号 |
US20010801455 |
申请日期 |
2001.03.08 |
申请人 |
HOUGE ERIK C.;MCINTOSH JOHN M.;PLEW LARRY E.;STEVIE FRED A.;VARTULI CATHERINE |
发明人 |
HOUGE ERIK C.;MCINTOSH JOHN M.;PLEW LARRY E.;STEVIE FRED A.;VARTULI CATHERINE |
分类号 |
G01N23/225;(IPC1-7):G06F19/00 |
主分类号 |
G01N23/225 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|