发明名称 |
Semiconductor device having quasi-SOI structure and manufacturing method thereof |
摘要 |
A semiconductor device having a silicon-on-insulator (SOI) structure includes a lower silicon substrate and an upper silicon pattern electrically insulated from the lower silicon pattern by an isolating insulation layer buried by a reverse T-type hole formed in the lower silicon substrate. A gate insulation layer and a gate electrode are formed over the upper silicon pattern, and source/drain regions are formed in the upper silicon pattern centered around the gate electrode. Also, a channel region is disposed between the source/drain region. A silicon layer or a porous silicon layer is formed under the channel region for electrically connecting the lower silicon substrate and the upper silicon pattern. A body contact, which is the same as that of a general semiconductor device, is thus allowed without a special change in the design of the semiconductor device.
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申请公布号 |
US6448115(B1) |
申请公布日期 |
2002.09.10 |
申请号 |
US20000686883 |
申请日期 |
2000.10.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAE GEUM-JONG |
分类号 |
H01L21/76;H01L21/34;H01L21/762;H01L21/764;H01L27/08;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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