METHOD FOR FORMING GATE ELECTRODE USING DAMASCENE AND GATE ELECTRODE USING THE SAME

摘要

PURPOSE: A formation method of a gate electrode using a damascene is provided to improve a side profile and an upper profile by using an insulating layer. CONSTITUTION: An insulating layer(202) is deposited on the entire surface of a semiconductor substrate. Then, a resist pattern for defining a gate electrode is formed on the insulating layer(202). A trench is formed in the insulating layer(202) by selectively etching the insulating layer(202) to a gate insulating layer(200) using the resist pattern as an etch mask. Then, the resist pattern is removed. A conductive material(102) is deposited on the entire surface of the resultant structure including the insulating layer(202) and the trench. Then, the conductive material(102) is polished to expose the insulating layer(202) as an ending point.