Methods of manufacturing a metal pattern of a semiconductor device which include forming nitride layer at exposed sidewalls of Ti layer of the pattern

摘要

A method of manufacturing a metal pattern of a semiconductor device. A Ti layer and a metal layer are successively formed on a semiconductor substrate or on an insulating layer. Then, a wiring pattern including a Ti layer pattern and a metal layer pattern is formed by patterning said Ti layer and the metal layer. Heat treating is employed under an atmosphere of a compound including nitrogen in order to react an exposed portion of the Ti layer pattern to form TiN as a main product, thereby increasing the stability and adhesiveness of the metal layer for subsequent processes.