发明名称 |
Method of forming a pattern using proximity-effect-correction |
摘要 |
A method of correcting light proximity effects includes the steps of: compressing design data of a circuit pattern (step S1); generating a projection image which is formed during a process of transferring a pattern onto a wafer, the projection image being generated according to the design data (step S2); predicting the size of the transferred pattern, said prediction being performed from the projection image (step S3); calculating the difference between the predicted size of the transferred pattern and the pattern size designated by the design data (step S4); correcting the compressed design data by an amount equal to the above-described difference (step S5); judging whether the correction amount is within an allowable range (step S6); expanding the corrected data after the correction amount has fallen within the allowable range (step S7); and outputting the resultant data (step S8).
|
申请公布号 |
US6453274(B2) |
申请公布日期 |
2002.09.17 |
申请号 |
US19980116375 |
申请日期 |
1998.07.16 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
KAMON KAZUYA |
分类号 |
H01L21/82;G03F1/08;G03F7/20;G06F17/50;G06T9/00;(IPC1-7):G06F7/60;G06F17/10 |
主分类号 |
H01L21/82 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|