| 摘要 |
PROBLEM TO BE SOLVED: To activate p-type impurities of a GaN-based semiconductor crystal layer doped with the p-type impurities by a simple method. SOLUTION: A GaN low temperature layer 2 and a GaN buffer layer 3 are formed on a sapphire substrate 1, an SiO2 mask pattern is formed thereon and then a GaN film 6, an n-GaN contact layer 9, an n-Ga1-z1 Alz1 N/GaN super lattice clad layer 16, an n-Ga1-y2 Aly2 N optical waveguide layer 17, a Inx2 Ga1-x2 N/ Inx1 Ga1-x1 N multiple quantum well active layer 18, a p-Ga1-y3 Aly3 N carrier blocking layer 19, a p-Ga1-y2 Aly2 N optical waveguide layer 20, a p-Ga1-z1 Alz1 N/ GaN super lattice clad layer 21, and a p-GaN contact layer 22 are grown sequentially thereon. the multilayer semiconductor sample 31 is irradiated with UV-rays 30a having a wavelength in a range of 200-350 nm for one hour in the atmosphere at the room temperature and then heat-treated at 700 deg.C for 30 min thus activating the p-type impurities.
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