MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To facilitate process for a gate electrode of a CMIS circuit, including a dual-gate electrode structure. SOLUTION: The CMIS circuit, which includes the dual-gate electrode structure, is formed on a SOI substrate. The thickness of the gate electrodes 4A, 4B of nMISQn and pMISQp, forming the CMIS circuit, is set almost equal to or a slightly larger than that of the semiconductor layer IC of the SOI substrate 1.