SINGLE CRYSTAL SUBSTRATE MANUFACTURING METHOD AND INTEGRATED CIRCUIT FORMED THEREON

摘要

PROBLEM TO BE SOLVED: To manufacture a single crystal substrate allowing a silicon epitaxial layer having no crystal defect to be formed thereafter. SOLUTION: The manufacturing method comprises a step of forming an initial single crystal substrate having at least one crystal lattice discontinuity locally on the surface, recessing the discontinuous spot of the initial substrate, making a crystal lattice around the recess amorphous, depositing a layer of an amorphous material having the same chemical composition as the initial substrate on an obtained structure, and thermally annealing the obtained structure to re-crystallize the amorphous portions so as to continue the single crystal lattice of the initial substrate.