| 摘要 |
In the manufacture of an integrated circuit memory capacitor, an underlying hydrogen barrier layer, either electrically nonconductive or conductive, is formed on a substrate. Then, the lower electrode layer and the ferroelectric/dielectric layer are formed and selectively etched. A nonconductive hydrogen barrier layer is formed on the dielectric layer and selectively etched. After a heat treatment in oxygen, the upper electrode layer and a conductive hydrogen barrier layer are successively deposited and selectively etched. The nonconductive hydrogen barrier layer covers the capacitor except for a part of the upper electrode, and the conductive hydrogen barrier layer covers a portion where there is no nonconductive hydrogen barrier layer. Thus, the underlying barrier layer, the nonconductive barrier layer and the conductive barrier layer together completely cover the memory capacitor. The dielectric layer comprises a ferroelectric or high-dielectric constant metal oxide. The nonconductive hydrogen barrier layer is typically SiN. The conductive hydrogen barrier layer is typically a metal nitride, such as TiN or AIN.
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