发明名称 Memory erasing method, memory controller, and memory storage apparatus
摘要 A memory erasing method and a memory controller and a memory storage apparatus using the same are provided. The memory erasing method includes following steps. Physical blocks of a rewritable non-volatile memory module of the memory storage apparatus are logically grouped into at least a data area and a spare area. After the memory storage apparatus is powered on, an erase mark is configured for each of the physical blocks in the spare area, and each of the erase marks is initially set to an unerased state. After the memory storage apparatus enters a standby state, whether an erase command is executed on the physical blocks in the spare area is determined according to the erase marks. Thereby, the memory erasing method can effectively shorten the time for the memory storage apparatus to enter the standby state after the memory storage apparatus is powered on.
申请公布号 US9460004(B2) 申请公布日期 2016.10.04
申请号 US201113213107 申请日期 2011.08.19
申请人 PHISON ELECTRONICS CORP. 发明人 Teo Wei-Chen
分类号 G06F12/02 主分类号 G06F12/02
代理机构 Jianq Chyun IP Office 代理人 Jianq Chyun IP Office
主权项 1. A memory erasing method for a rewritable non-volatile memory module of a memory storage apparatus, wherein the rewritable non-volatile memory module has a plurality of physical blocks, the memory erasing method comprising: logically grouping the physical blocks into at least a data area and a spare area, wherein each of the physical blocks of the spare area is not mapped to a logical address; and during every power on of the memory storage apparatus, configuring an erase mark corresponding to each of the physical blocks of the spare area and initially setting each of the erase marks to an unerased state, wherein after initially setting each of the erase marks to the unerased state, the memory storage apparatus is entered to a standby state to receive and process commands from the host system.
地址 Miaoli TW