METHOD FOR FORMING CRYSTALLINE SEMICONDUCTOR THIN FILM ON BASE SUBSTRATE, LAMINATION FORMED WITH CRYSTALLINE SEMICONDUCTOR THIN FILM, AND COLOR FILTER

摘要

PURPOSE: A method for forming a crystalline semiconductor thin film on a base substrate, a lamination formed with the crystalline semiconductor thin film, and a color filter are provided to lower the heating temperature, to remove laser beam spot scanning, and to reduce the manufacturing cost. CONSTITUTION: A method for forming a crystalline semiconductor thin film on a base material(10) comprises a step of applying UV-rays to an amorphous semiconductor thin film provided on the base material while keeping a temperature at not less than 25deg.C. and not more than 300deg.C. in a vacuum or a reducing gas atmosphere. In the method of forming the crystalline semiconductor thin film on a base material, the reducing gas atmosphere contains a hydrogen gas. The UV-rays are light from an excimer lamp. The kept temperature is within a temperature range from 50deg.C. to 250deg.C.