| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element, capable of being manufactured at a low cost by emitting a light in a region containing a pure blue at a long lifetime. SOLUTION: The semiconductor laser element 10 comprises an n-type clad layer 4, an n-type guide layer 5, an active layer 6, a p-type guide layer 7 and a p-type clad layer 8 sequentially laminated on a semiconductor substrate 1. In this element, the substrate 1 is constituted of GaAs. The layers 4 and 8 are each constituted of Zn0.62 Be0.38 Se0.5 Te0.5 . The layers 5 and 7 are each constituted of Zn0.72 Be0.28 Se0.64 Te0.36 . The layer 6 is constituted of Zn0.77 Be0.23 Se0.7 Te0.3 .
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