| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same having a capacitor achieving a high capacity without interfering a high integration and deteriorating characteristics. SOLUTION: The method of manufacturing the semiconductor comprises the steps of the forming an n+ type epitaxial layer 2a first on a substrate, forming a SiO2 film on the substrate and opening a capacitor dielectric film region and an upper electrode contact region by means of photo lithography and etching. A capacitor dielectric SiN film is formed thereon and an intermediate conduction film 21 is deposited after forming. Further, a second dielectric SiN film is deposited, an upper conduction film 23 is deposited and formed thereon after forming. Finally, a capacitor 20 having a high capacitance connecting two stacked structure capacitors in parallel is provided by taking out each terminal from the upper conduction film 23 and the intermediate conduction film 21.
|
