METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To form an isolation insulation film optimum for each surface silicon layer in a method of manufacturing a semiconductor device, by which elements having different surface silicon layer film thicknesses are formed on the same SOI substrate. SOLUTION: When the surface silicon layer of an element having a thin surface silicon layer is made into a thin film, the surface silicon layer of an element with at thick surface silicon layer in an isolation area is also made into a thin film so that the isolation insulation layers of both elements with the thick surface silicon layer and the thin surface silicon layer are formed at the same time in a process to form the elements having different surface silicon layer film thicknesses on the same substrate.