发明名称 |
Method of forming a dual damascene opening using CVD Low-K material and spin-on-polymer |
摘要 |
A method of forming a dual damascene opening, comprising the following steps. A semiconductor structure having at least one exposed metal line is provided. A spin-on-polymer layer is formed over the semiconductor structure and the metal line. A CVD low-k material layer is formed over the spin-on-polymer layer. The CVD low-k material layer is patterned to form a CVD low-k material layer via over the metal line. The spin-on-polymer layer is patterned to form a spin-on-polymer layer via opening continuous and contiguous with the CVD low-k material layer via and exposing a portion of the metal line. The CVD low-k material layer adjacent the CVD low-k material layer via is patterned to form a CVD low-k material layer trench. The spin-on-polymer layer via opening and the CVD low-k material layer trench forming a dual damascene opening.
|
申请公布号 |
US6472306(B1) |
申请公布日期 |
2002.10.29 |
申请号 |
US20000655097 |
申请日期 |
2000.09.05 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
LEE SHYH-DAR;CHANG CHUNG-I |
分类号 |
H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|