发明名称 Graphite mask for x-ray or deep x-ray lithography
摘要 A method is disclosed for producing x-ray masks on graphite substrates inexpensively and rapidly. The method eliminates the need for an intermediate x-ray mask, instead using a less expensive intermediate UV lithography step. The absorber structures are electroplated directly onto the graphite. The capability to economically produce x-ray masks is expected to greatly enhance the commercial appeal of x-ray lithography in processes such as LIGA. The x-ray mask produced by this process comprises a graphite substrate that supports an absorber such as gold-on-nickel. The thickness of the absorber structures can be varied as needed to supply sufficient contrast for the particular application. A layer of a deep UV resist such as SU-8 is spin-coated directly onto a graphite substrate. The resist is then patterned with an UV mask using a UV radiation source. After developing the exposed resist, gold-on-nickel or other absorber structures are electroplated directly into the resist-covered graphite, and the resist is then removed.
申请公布号 US6482553(B1) 申请公布日期 2002.11.19
申请号 US20000603512 申请日期 2000.06.26
申请人 BOARD OF SUPERVISORS OF LOUISIANA STATE UNIVERSITY AND AGRICULTURAL AND MECHANICAL COLLEGE 发明人 GOETTERT JOST S.;COANE PHILIP J.;KELLY KEVIN W.
分类号 G03F1/14;(IPC1-7):G03F9/00;G21K5/00 主分类号 G03F1/14
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