发明名称 |
Graphite mask for x-ray or deep x-ray lithography |
摘要 |
A method is disclosed for producing x-ray masks on graphite substrates inexpensively and rapidly. The method eliminates the need for an intermediate x-ray mask, instead using a less expensive intermediate UV lithography step. The absorber structures are electroplated directly onto the graphite. The capability to economically produce x-ray masks is expected to greatly enhance the commercial appeal of x-ray lithography in processes such as LIGA. The x-ray mask produced by this process comprises a graphite substrate that supports an absorber such as gold-on-nickel. The thickness of the absorber structures can be varied as needed to supply sufficient contrast for the particular application. A layer of a deep UV resist such as SU-8 is spin-coated directly onto a graphite substrate. The resist is then patterned with an UV mask using a UV radiation source. After developing the exposed resist, gold-on-nickel or other absorber structures are electroplated directly into the resist-covered graphite, and the resist is then removed.
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申请公布号 |
US6482553(B1) |
申请公布日期 |
2002.11.19 |
申请号 |
US20000603512 |
申请日期 |
2000.06.26 |
申请人 |
BOARD OF SUPERVISORS OF LOUISIANA STATE UNIVERSITY AND AGRICULTURAL AND MECHANICAL COLLEGE |
发明人 |
GOETTERT JOST S.;COANE PHILIP J.;KELLY KEVIN W. |
分类号 |
G03F1/14;(IPC1-7):G03F9/00;G21K5/00 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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