发明名称 |
Two step plasma etch using variable electrode spacing |
摘要 |
A method of etching in a plasma etching chamber having an upper electrode and a susceptor is disclosed. The method comprises: setting the upper electrode and the susceptor to a first predetermined distance; performing a first etch at the first predetermined distance for a first predetermined time; setting the upper electrode and the susceptor to a second predetermined distance; and performing a first etch at the second predetermined distance for a second predetermined time.
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申请公布号 |
US6482744(B1) |
申请公布日期 |
2002.11.19 |
申请号 |
US20000640488 |
申请日期 |
2000.08.16 |
申请人 |
PROMOS TECHNOLOGIES, INC. |
发明人 |
WU CHAO-CHUEH |
分类号 |
H01J37/32;(IPC1-7):H01L21/311 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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