发明名称 |
Double planar gated SOI MOSFET structure |
摘要 |
A double gated silicon-on-insulator (SOI) MOSFET is fabricated by using a mandrel shallow trench isolation formation process, followed by a damascene gate. The double gated MOSFET features narrow diffusion lines defined sublithographically or lithographically and shrunk, damascene process defined by an STI-like mandrel process. The double gated SOI MOSFET increases current drive per layout width and provides low out conductance.
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申请公布号 |
US6483156(B1) |
申请公布日期 |
2002.11.19 |
申请号 |
US20000526857 |
申请日期 |
2000.03.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADKISSON JAMES W.;BRACCHITTA JOHN A.;ELLIS-MONAGHAN JOHN J.;LASKY JEROME B.;LEOBANDUNG EFFENDI;PETERSON KIRK D.;RANKIN JED H. |
分类号 |
H01L21/336;H01L21/762;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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