发明名称 Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the same
摘要 An integrated circuit that is capable of being burn-in tested with an AC stress and a testing method using the same are provided. The integrated circuit includes an address transforming means and a data generating means. The address transforming means transforms the addresses of the memory cell selected and generates an address signal responsive to a clock signal. The data generating means generates a data signal that alternates between a first state and a second state responsive to the clock signal and provides the data signal to the selected memory cell. The integrated circuit includes a switch for coupling the test supply line to the normal supply line during testing and intercepting the test supply line from the normal supply line during normal operations responsive to a control signal. The integrated circuit of the present invention allows a wafer burn-in test by sequentially and repeatedly applying the AC stress to all the memory cells.
申请公布号 US6490223(B1) 申请公布日期 2002.12.03
申请号 US20000614783 申请日期 2000.07.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN SANG-JIB;KIM DU-EUNG;KWAK CHOONG-KEUN;SHIN YUN-SEUNG
分类号 G01R31/26;G01R31/28;G01R31/30;G01R31/3185;G11C29/00;G11C29/06;G11C29/50;H01L21/66;(IPC1-7):G11C8/00 主分类号 G01R31/26
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