发明名称 |
Method of re-programming an array of non-volatile memory cells, in particular of the nor architecture flash type, after an erase operation, and a corresponding memory device |
摘要 |
A method of re-programming an array of non-volatile memory cells after an erase operation is provided where a re-program operation is executed to restore a threshold voltage of the memory cells to a higher value than a depletion verify voltage value. The method may include identifying a first value of the depletion verify voltage, executing the re-program operation using the value of the depletion verify voltage, and verifying the array of re-programmed cells for reliability in a read mode. If the outcome of the verifying step is favorable, the re-program operation is terminated as successful. Otherwise, the value of the depletion verify voltage is modified, and the re-program operation is again executed using the modified value of the depletion verify voltage as adjusted for the actual operating conditions of the memory array.
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申请公布号 |
US2002186594(A1) |
申请公布日期 |
2002.12.12 |
申请号 |
US20020171078 |
申请日期 |
2002.06.12 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
VISCONTI ANGELO |
分类号 |
G11C16/34;(IPC1-7):G11C16/06 |
主分类号 |
G11C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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