发明名称 |
METHOD FOR FORMING SELECTIVE PROTECTION LAYERS ON COPPER INTERCONNECTS |
摘要 |
Disclosed is a method for forming selective protection layers on copper interconnects in a damascene process. A copper layer is deposited overlying a dielectric layer and filling interconnect trenches which are previously formed in the dielectric layer. The excess copper layer is polished by a chemical mechanical polishing process with a slurry comprising an aluminum organic substance. The aluminum organic substance reacts with copper via annealing to selectively form aluminum-copper alloys on the copper interconnects. The aluminum-copper alloys are then oxidized to form aluminum oxide protection layers capping the copper interconnects.
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申请公布号 |
US2002192940(A1) |
申请公布日期 |
2002.12.19 |
申请号 |
US20010881103 |
申请日期 |
2001.06.15 |
申请人 |
LEE SHYH-DAR;HSUE CHEN-CHIU |
发明人 |
LEE SHYH-DAR;HSUE CHEN-CHIU |
分类号 |
H01L21/321;H01L21/768;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/321 |
代理机构 |
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代理人 |
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主权项 |
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