| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory material which is nonvolatile, high-speed, randomly accessible, static and capable of being updated. SOLUTION: A composition material with ferromagnetic, piezoelectric and electro-optical characteristics is disclosed. In a preferred embodiment, this composition material is composed of a first layer of M(1-x-y) Cdx Siy (M being Te or Zn), a second layer of Se(1-z) Sz and a third layer of Fe(1-w) Crw , where x, y, z and w have values within the range of 0.09<=x<=0.11, 0.09<=y<=0.11, 0.09<=z<=0.11 and 0.18<=w<=0.30. Further, each layer contains at least one element from among Ag, Bi, O, or N. Also, a nonvolatile memory, made of this composition material which is randomly accessible, is disclosed.
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