发明名称 MAGNETRON SPUTTERING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a magnetron sputtering apparatus suitable for forming a film consisting of a magnetic material on a substrate. SOLUTION: The magnetron sputtering apparatus having a target to be sputtered, a substrate arranged so as to face the target, on which the sputtered material from the target is deposited, and a magnetic field generating means for generating the magnetic field on the surface of the target, comprises the target composed of magnetic materials, arranging the magnetic field generating means so as to surround the target, and forming an unbalanced magnetic field.
申请公布号 JP2003013220(A) 申请公布日期 2003.01.15
申请号 JP20010200507 申请日期 2001.07.02
申请人 SANYO SHINKU KOGYO KK 发明人 KITAHATA AKIHIRO;KAWABATA TAKASHI;YAMADA TAKAHARU
分类号 C23C14/35;G11B7/26;(IPC1-7):C23C14/35 主分类号 C23C14/35
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