| 摘要 |
In producing rod-form high-purity polycrystalline silicon by depositing silicon on a silicon core by the thermal decomposition of a silane gas, the occurrence of defects near the interface of the silicon core and polycrystalline silicon newly deposited thereon is prevented. A silicon core before depositing silicon thereon is subjected to a hydrogen treatment. In this case, the treatment temperature and the treatment time are controlled according to the dew point of the hydrogen gas. After the hydrogen treatment, the hydrogen gas in a reactor may be replaced with a high-purity hydrogen gas, followed by producing a polycrystalline silicon by a silane gas.
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