COMPOUND SEMICONDUCTOR EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a compound semiconductor epitaxial wafer on which an element having good electrical characteristics can be fabricated by reducing leak current between the source-drain electrodes. SOLUTION: The compound semiconductor epitaxial wafer comprises a semiconductor substrate 10, and an epitaxial layer 20 formed on the semiconductor substrate 10 wherein a single layer or multilayer insulation layer 15 is provided between the semiconductor substrate 10 and the epitaxial layer 20.