| 摘要 |
PROBLEM TO BE SOLVED: To stably obtain manufacturing of a semiconductor film of a high quality over a long period by solving the problem of a semiconductor film by-product being mixed with a boat-rotating mechanism and fixing the mechanism. SOLUTION: A substrate treatment apparatus comprises a vertical reaction furnace, a boat 16 and a boat support base 13, a cover 7 for blocking a furnace which opens via an O-ring 6, and a boat support base rotating mechanism 10. In this apparatus, the cover 7 is made of metal. The apparatus further comprises a cooling channel 30 for the O-ring 6 provided in the cover 7, a stoker 20 made of a material of any among SiC, Si or SiO2 and provided at a lower end of the base 13, a suspended part 21 extended from an outer periphery of a lower end of the base to a lower side at the stoker 20, an extended part 22, extended to immediate front of a reaction chamber wall at a radial outside from the lower end of the part 21 to a radial outside and extended along a treatment space exposed surface 7a of the cover 7, in such a manner that a reaction gas hardly penetrates into the periphery of a rotary shaft 11 to allow a heat to be communicated in a gap between the exposed surface 7a and the extended part 22.
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