| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing a compound semiconductor, capable of epitaxially growing a semiconductor crystal over the whole surface of a substrate and facilitating the work to set wafers in a susceptor. SOLUTION: In the apparatus for manufacturing a compound semiconductor having a susceptor 10, which a through-hole 12 for receiving a wafer 1 having a surface on which a semiconductor crystal is grown, is formed, substrate- holding means for holding the substrate 1 received in the through-hole 12 provided in this susceptor 10, and thermally equalizing means superposed on the wafer 1 and received in the through-hole 12 along with the wafer 1 to equalize the surface temperature of the substrate 1, the thermally equalizing means consists of a thermally equalizing plate 20 in which suction holes 22 are formed, and the wafer holding means consists of sucking mechanism for holding the substrate 1 by sucking it to the thermally equalizing plate 20 through the suction holes 22.
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