| 摘要 |
A semiconductor device in accordance with the present invention is equipped with a gate electrode 10 formed on a BOX layer 2, a gate oxide film 11 formed on the gate electrode, a body region 12a composed of epitaxial Si formed on the gate oxide film, diffusion layers 18 and 19 for source/drain regions formed on both sides of the body region, and a body terminal connected to the body region for applying a specified potential to the body region. As a result, the substrate floating effect is suppressed even in a transistor having a short gate length and a long gate width.
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