发明名称 Semiconductor device, such as a synchronous dram, including a control circuit for reducing power consumption
摘要 A semiconductor device comprising a plurality of memory banks and a plurality of power supply circuits corresponding to the memory banks. Each of the memory banks is independently activated by an activating command. Given an externally supplied voltage, each of the power supply circuits outputs a predetermined internal supply voltage. Each power supply circuit has its output connected to the corresponding memory bank. In response to a command for activating one of the memory banks, the corresponding power supply circuit is activated while the remaining power supply circuits is deactivated.
申请公布号 US2003039158(A1) 申请公布日期 2003.02.27
申请号 US20020259579 申请日期 2002.09.30
申请人 发明人 HORIGUCHI MASASHI;NAKAMURA MASAYUKI;OHKUMA SADAYUKI;KAJIGAYA KAZUHIKO;NAKAGOME YOSHINOBU
分类号 G11C11/413;G11C5/06;G11C5/14;G11C7/10;G11C8/00;G11C8/12;G11C11/401;G11C11/406;G11C11/407;G11C11/4074;G11C11/4076;G11C11/409;H01L21/8242;H01L27/108;(IPC1-7):G11C7/00 主分类号 G11C11/413
代理机构 代理人
主权项
地址