| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation device. SOLUTION: This ion implantation device is provided with a scanning means for moving a wafer W so as to scan the wafer W by an ion beam in an area irradiated with the ion beam by mounting the wafer W, and a spillover cup 229 for detecting the ion beam overscanned outside the scanning means. A surface of the spillover cup 229 is constituted so that a part adjacent to the scanning means is positioned below a surface of the wafer W mounted on the scanning means, and the surface inclines as a whole, thereby the wafer W of the scanning means is prevented from being contaminated by a sputtering particles generated from the surface of the spillover cup 229.
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