发明名称 MEMORY TEST CIRCUIT
摘要 PROBLEM TO BE SOLVED: To shorten a test time of a memory test circuit. SOLUTION: This circuit is constituted of a test circuit in a memory detecting failure in a specific address in each memory-macro and a test circuit between memories detecting failure at the same address and the same bit position between a plurality of memory-macros.
申请公布号 JP2003059296(A) 申请公布日期 2003.02.28
申请号 JP20010241942 申请日期 2001.08.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 ISOI NORITSUGU
分类号 G01R31/28;G06F12/16;G11C29/00;G11C29/34;(IPC1-7):G11C29/00 主分类号 G01R31/28
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