发明名称 METHOD FOR PRODUCING CAPACITOR STRUCTURES
摘要 The invention relates to a method for producing at least one capacitor structure, comprising the following steps: providing a substrate, producing a first electrode on said substrate, producing a mask, whereby the first electrode is disposed in an opening of said mask, and applying at least one dielectric layer and at least one conductive layer for a second eletrode. The surface of the part of the conductive layer that is applied in the opening of the mask is substantially disposed below the surface of the mask. The conductive layer and the dielectric layer are structured by polishing so that a capacitor structure is produced.
申请公布号 KR20030020273(A) 申请公布日期 2003.03.08
申请号 KR20027014182 申请日期 2001.04.27
申请人 发明人
分类号 H01L21/8242;H01L27/04;H01L21/02;H01L21/3105;H01L21/321;H01L21/822;H01L21/8246;H01L27/105;H01L27/108 主分类号 H01L21/8242
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