| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a metallic film, which can perform plasma treatment in an optimum condition by separately controlling density of generated plasma and collision energy of ions in plasma against a substrate, when reforming the surface of the substrate by plasma treatment, and can impart the reformed surface of the substrate with excellent adhesiveness to the metallic film, by preventing foreign molecules from bonding to the reformed surface of the substrate before formation of the metallic film. SOLUTION: The film forming apparatus has a holding electrode 2 made from a metal for holding the substrate 1, and a counter electrode 3 made from a metal, which are arranged so as to face each other. The method comprises applying high-frequency voltage to the holding electrode 2 and the counter electrode 3 through respectively independent high-frequency power sources 4 and 5, generating plasma P by ionizing an atmospheric gas between the holding electrode 2 and the counter electrode 3, colliding cations in the plasma P against the substrate 1 to reform the surface of the substrate 1, and simultaneously colliding the cations against the counter electrode 3 and the holding electrode 2 to form the metal film on the surface of the substrate 1 by sputtering.
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