MONOLITHIC INTEGRATED PHOTONICS WITH LATERAL BIPOLAR AND BICMOS

摘要

After forming a first trench extending through a top semiconductor layer and a buried insulator layer and into a handle substrate of a semiconductor-on-insulator (SOI) substrate, a dielectric waveguide material stack including a lower dielectric cladding layer, a core layer and an upper dielectric cladding layer is formed within the first trench. Next, at least one lateral bipolar junction transistor (BJT), which can be a PNP BJT, an NPN BJT or a pair of complementary PNP BJT and NPN BJT, is formed in a remaining portion of the top semiconductor layer. After forming a second trench extending through the dielectric waveguide material stack to re-expose a portion of a bottom surface of the first trench, a laser diode is formed in the second trench.

主权项

1. A semiconductor structure comprising
at least one electronic device located on a portion of a semiconductor-on-insulator (SOI) substrate, wherein the at least one electron device comprises at least one bipolar junction transistor (BJT); and photonic devices embedded within another portion of the SOI substrate, wherein the photonic devices comprise:
a dielectric waveguide comprising a lower dielectric cladding portion, a core portion present on the lower dielectric cladding portion, and an upper dielectric cladding potion present on the core portion; andan optoelectronic device edge-coupled to the dielectric waveguide, the optoelectronic device comprising an active layer laterally aligned to the core portion of the dielectric waveguide.