NITRIDE SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To realize long-time continuous oscillation by decreasing threshold current and voltage of an LD element comprising a nitride semiconductor. SOLUTION: A nitride semiconductor element is constituted by forming an active layer between a nitride semiconductor layer on an n-conductive side and that on a p-conductive side. Related to the nitride semiconductor layer on the n-conductive side and/or p-conductive side, an n-side strained superlattice layer is constituted at the position away from or contacting the active layer by laminating first and second nitride semiconductor layers whose band gap energy and impurity concentration are different from each other.