发明名称 |
HEAT TREATMENT FURNACE |
摘要 |
PROBLEM TO BE SOLVED: To provide a heat treatment furnace by which reduction of impurity contamination on a semiconductor wafer for heat treatment and influence on the surface quality are reduced by reducing particles in the heat treatment process of the semiconductor wafer. SOLUTION: In the heat treatment furnace having a process tube at least from a furnace port through which a semiconductor wafers are inserted and to a furnace tailing port to which a gas supply tube is connected, a liner pipe into which the process tube is inserted and a heater arranged at the perimeter of the liner pipe, the inner diameter of the process tube has a smaller diameter portion than that of the soaking region at a heating region apart from a soaking region of the process tube at the tailing port.
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申请公布号 |
JP2003100764(A) |
申请公布日期 |
2003.04.04 |
申请号 |
JP20010289728 |
申请日期 |
2001.09.21 |
申请人 |
SHIN ETSU HANDOTAI CO LTD |
发明人 |
MAGARI TAKEMINE;TAMAZUKA MASARO;KOBAYASHI NORIHIRO;NAGOYA TAKATOSHI |
分类号 |
H01L21/22;H01L21/31;H01L21/324;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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