| 摘要 |
PURPOSE: A method for fabricating a semiconductor thin film having two layers capable of controlling an abnormal growth of dichloro-silane is provided to eliminate or decrease an abnormal growth of a lower polysilicon layer, by stacking the lower polysilicon layer at a temperature in which the lower polysilicon is not crystallized and by preventing silicon from being injected to the lower polysilicon layer. CONSTITUTION: A diffusion process is performed at the first temperature in which polysilicon is not crystallized so that a polysilicon layer is formed on a substrate. The first temperature for forming the polysilicon layer is increased to the second temperature. The polysilicon layer is flushed to form a transition layer by using the first flush material(S106). The polysilicon layer is flushed to form the second material layer on the polysilicon layer by using the second flush material(S108). The transition layer provides an adhesion characteristic between the second material layer and the polysilicon. The bulk of the second material layer is formed on the transition layer by using a composition of the first and second flush materials. The bulk of the second material layer is flushed to remove impurities by using the second flush material. The bulk of the second material layer is flushed to decrease stress between the polysilicon layer and the second material layer by using the first flush material(S116).
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