SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURES AND MANUFACTURING METHOD THEROF

摘要

A semiconductor device includes a Fin FET transistor. The Fin FET transistor includes a first fin structure extending in a first direction, a gate stack and a source and a drain. The gate stack includes a gate electrode layer and a gate dielectric layer, covers a portion of the fin structure and extends in a second direction perpendicular to the first direction. Each of the source and drain includes a stressor layer disposed over the fin structure. The stressor layer applies a stress to a channel layer of the fin structure under the gate stack. The stressor layer penetrates under the gate stack. A vertical interface between the stressor layer and the fin structure under the gate stack in a third direction perpendicular to the first and second directions includes a flat area, and the flat area extends in the second direction and the third direction.

主权项

1. A semiconductor device, comprising:
a first Fin FET transistor including:
a first fin structure extending in a first direction;a first gate stack including a first gate electrode layer and a first gate dielectric layer, covering a portion of the first fin structure and extending in a second direction perpendicular to the first direction; anda first source and a first drain, each including a first stressor layer disposed over the first fin structure, the first stressor layer applying a stress to a channel layer of the first fin structure under the first gate stack, wherein: the first stressor layer penetrates under the first gate stack, a vertical interface between the first stressor layer and the first fin structure under the first gate stack in a third direction perpendicular to the first and second directions includes a first flat area, and the flat area extends in the second direction and the third direction.