发明名称 |
Method and apparatus for the grounding of process wafers by the use of conductive regions created by ion implantation into the surface of an electrostatic clamp |
摘要 |
The present invention relates to an electrostatic clamp and comprises a dielectric layer overlying an electrode and a doped region in the dielectric layer. The doped region of the dielectric layer is electrically conductive, and when the doped region is coupled to a circuit ground potential, the doped region of the dielectric layer is operable to bleed off charge which accumulates on a workpiece residing thereon during processing. The present invention further comprises a method of forming an electrostatic clamp which comprises the steps of forming an electrically insulating layer over an electrode and doping a portion of the electrically insulating layer, wherein the doped portion of the electrically insulating layer becomes electrically conductive.
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申请公布号 |
US6552892(B2) |
申请公布日期 |
2003.04.22 |
申请号 |
US20010852221 |
申请日期 |
2001.05.09 |
申请人 |
AXCELIS TECHNOLOGIES, INC. |
发明人 |
CARROLL JAMES C.;KLESEL DENNIS M.;LAGOS BRYAN C.;PETRY KLAUS |
分类号 |
H01L21/683;(IPC1-7):H01T23/00 |
主分类号 |
H01L21/683 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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