发明名称 |
Hafnium nitride gate dielectric |
摘要 |
A field effect semiconductor device comprising a high permittivity hafnium (or hafnium-zirconium) nitride gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate 20 having a semiconducting channel region 24 formed therein. A hafnium (or hafnium-zirconium) nitride gate dielectric layer 36 is formed over this substrate, followed by a conductive gate 38. Hafnium (or hafnium-zirconium) nitride gate dielectric layer 36 has a dielectric constant is significantly higher than the dielectric constant of silicon dioxide.
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申请公布号 |
US6552388(B2) |
申请公布日期 |
2003.04.22 |
申请号 |
US20020171932 |
申请日期 |
2002.06.14 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
WILK GLEN D.;WALLACE ROBERT M. |
分类号 |
H01L21/28;H01L21/285;H01L21/318;H01L29/51;(IPC1-7):H01K21/320;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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