发明名称 METHOD OF PRODUCING ALUMINUM NITRIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a method of producing an aluminum nitride single crystal, by which the aluminum nitride single crystal having a large diameter can be produced at a low cost. SOLUTION: In the method of producing the aluminum nitride single crystal, the aluminum nitride single crystal is grown by melting an aluminum alloy containing at least one transition metal element in an amount of 1 to 50 atom.% in total, in a non-oxidizing atmosphere containing nitrogen and maintaining the alloy in a molten state for a predetermined time so as to accelerate nitriding of aluminum.
申请公布号 JP2003119099(A) 申请公布日期 2003.04.23
申请号 JP20010313663 申请日期 2001.10.11
申请人 SUMITOMO METAL IND LTD 发明人 WAKITA MASAYUKI;KAMEI KAZUTO
分类号 C30B29/38;C30B11/12;(IPC1-7):C30B29/38 主分类号 C30B29/38
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