发明名称 |
SUBSTRATE TREATMENT APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To stably maintain high cleanliness within a cabinet in a substrate treatment apparatus for manufacturing a semiconductor device by conducting processes such as film forming and impurity diffusion or the like to the substrate. SOLUTION: This substrate treatment apparatus is provided with individual air supply ports 21, 22 for a plurality of independent clean air flows formed so as to make well balanced clean air flow to each unit of a down-cooling unit 9, buffer cooling unit 11 and side cooling unit 12 mounted in a cabinet 1. |
申请公布号 |
JP2003151867(A) |
申请公布日期 |
2003.05.23 |
申请号 |
JP20010346113 |
申请日期 |
2001.11.12 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
TANIYAMA TOMOSHI;KOTAKE KATSUNORI |
分类号 |
H01L21/677;H01L21/02;H01L21/68;(IPC1-7):H01L21/02 |
主分类号 |
H01L21/677 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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