发明名称 SUBSTRATE TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To stably maintain high cleanliness within a cabinet in a substrate treatment apparatus for manufacturing a semiconductor device by conducting processes such as film forming and impurity diffusion or the like to the substrate. SOLUTION: This substrate treatment apparatus is provided with individual air supply ports 21, 22 for a plurality of independent clean air flows formed so as to make well balanced clean air flow to each unit of a down-cooling unit 9, buffer cooling unit 11 and side cooling unit 12 mounted in a cabinet 1.
申请公布号 JP2003151867(A) 申请公布日期 2003.05.23
申请号 JP20010346113 申请日期 2001.11.12
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANIYAMA TOMOSHI;KOTAKE KATSUNORI
分类号 H01L21/677;H01L21/02;H01L21/68;(IPC1-7):H01L21/02 主分类号 H01L21/677
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